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MONOLITHIC DUAL, PNP TRANSISTOR < Back IT130 Series MONOLITHIC DUAL, PNP TRANSISTOR Previous Next

TIGHTLY MATCHED, MONOLITHIC DUAL, NPN TRANSISTOR < Back LS310 Series TIGHTLY MATCHED, MONOLITHIC DUAL, NPN TRANSISTOR The LS310 Series, Tightly Matched, Monolithic Dual, NPN Transistor is a direct replacement for Analog Devices MAT series and National LM3494 series. It is ideal for Tight Matching, Small Signal Transistor Amplifier & Switching Applications. It is available the in TO-71 6L, TO-78 6L, PDIP 8L, SOIC 8L, SOT-23 6L and DFN 8L package, as well as bare die. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: LS310 TO-71 6L RoHS LS311 TO-71 6L RoHS LS312 TO-71 6L RoHS LS313 TO-71 6L RoHS LS310 TO-78 6L RoHS LS311 TO-78 6L RoHS LS312 TO-78 6L RoHS LS313 TO-78 6L RoHS LS310 PDIP 8L RoHS LS311 PDIP 8L RoHS LS312 PDIP 8L RoHS LS313 PDIP 8L RoHS LS310 SOIC 8L RoHS LS311 SOIC 8L RoHS LS312 SOIC 8L RoHS LS313 SOIC 8L RoHS LS310 SOT-23 6L RoHS LS311 SOT-23 6L RoHS LS312 SOT-23 6L RoHS LS313 SOT-23 6L RoHS 311 DFN 8L RoHS 312 DFN 8L RoHS LS310 Die LS311 Die LS312 Die LS313 Die Datasheet Spice Model Application Notes

< Back Ansberry Named VP Linear Systems Mar 17, 2023 Michael Ansberry - VP for Process Engineering. Ansberry Named VP NEWS RELEASE FOR INFORMATION CONTACT: Laura Madonna, Marketing Analyst Linear Integrated Systems, Inc. Phone: (510) 490-9160 Email: laura@linearsystems.com ANSBERRY NAMED VP FOR PROCESS ENGINEERING AT LINEAR INTEGRATED SYSTEMS FREMONT, CA – 06/27/2018. Linear Integrated Systems, Inc., is proud to announce and welcome Michael Ansberry as the company’s Vice President for Process Engineering. Ansberry will be responsible for all aspects of the company’s semiconductor fabrication operations. Ansberry joins Linear Integrated Systems (Linear Systems) from Lumileds, where he was Director of Operations. Lumileds is a lighting company that designs and manufactures LEDs for automotive, general and specialty lighting applications. Prior to Lumileds, he worked in process engineering at Sipex, Micro Power Systems and other Silicon Valley semiconductor companies. While Ansberry’s most recent experience is in managing large-scale LED production, he has extensive process engineering experience with the types of world-class semiconductors produced by Linear Systems. “Linear Systems makes the best parts in their class, and I’m very glad to be joining the team here,” Ansberry said. “Ultra-low-noise discrete components are critical for a wide range of applications and joining Linear Systems during this period of growth is exciting.” Linear Systems CEO Cindy L. Johnson said Ansberry's hiring is a key part of the company’s program to expand to meet a growing demand for its products. “Efforts to produce more precise and capable sensors are leading designers to incorporate our ultra-low-noise JFETs and other parts into their devices,” Linear Integrated Systems, Inc., is a full-service, privately-held, 30-year-old designer and manufacturer of small-signal discrete semiconductors. The Fremont, CA company was founded by John H. Hall, co-founder of Intersil and founder of Micro Power Systems. Linear Systems’ product line consists of: Ultra-Low-Noise N-Channel and P-Channel Dual and Single JFETs, High-Speed Lateral DMOS Switches, Bipolar Transistors, BIFET Amplifiers, Current-Regulating Diodes, Low-Leakage Diodes, MOSFETs, PhotoFETS, and Voltage Controlled Resistors. Data sheets can be downloaded at linearsystems.com .

SINGLE, N-CHANNEL ENHANCEMENT MODE MOSFET < Back 2N4351 Series SINGLE, N-CHANNEL ENHANCEMENT MODE MOSFET The 2N4351 Series Single, N-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay part. It is ideal for Amplifier and Switching Applications. The part series is available in the TO-72 4L RoHS package, as well as in die form. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: 2N4351 TO-72 4L RoHS 2N4352 TO-72 4L RoHS 2N4351 Die 2N4352 Die Datasheet Spice Model Application Notes

< Back LS844 App Note Introduction Introduction For circuits designed to work with high impedance sources, ranging from electrometers to microphone preamplifiers, the use of a low-noise, high-impedance device between the input and the op amp is needed in order to optimize performance. At first glance, one of Linear Systems’ most popular parts, the LSK389 ultra-low-noise dual JFET would appear to be a good choice for such an application. The part’s high input impedance (1 T) and low noise (1 nV/√Hz at 1kHz and 2mA drain current) enables power transfer while adding almost no noise to the signal. But further examination of the LSK389’s specification shows an input capacitance of over 20pF. This will cause intermodulation distortion as the circuit’s input signal increases in frequency if the source impedance is high. This is because the JFET junction capacitances are nonlinear. This will be especially the case where common source amplifier arrangements allow the Miller effect to multiply the effective value of the gatedrain capacitance. Further, the LSK389’s input impedance will fall to a lower value as the frequency increases relative to a part with lower input capacitance. A better design choice is Linear Systems’ LS844. Though the LS844 has slightly higher noise (2.5 nV/√Hz vs. 1.0 nV/√Hz) its much lower input capacitance of only 4pF means that it will maintain its high input impedance as the frequency of the input signal rises. More importantly, using the lower-capacitance LS844 will create a circuit that is much less susceptible to intermodulation distortion than one using the LSK389. The LS844’s lower gate-to-drain capacitance enables more effective, elegant audio circuit designs. The relatively high capacitance of the LSK389 often requires designers to use a cascode circuit to provide the ability to handle higher bandwidths without intermodulation distortion. The cascode does this by eliminating the Miller effect that can multiply the effective gate-drain capacitance and its associated nonlinear effects. However, the cascode adds complexity and noise contributed by the cascode transistors. The LS844 is an N-channel dual low-noise, lowcapacitance, tightly matched monolithic field effect transistor. It features: • 3ms transconductance at 2mA drain current • 1000 G input impedance • 60V breakdown voltage • gate-drain capacitance of only 1.5pF • 4pF input capacitance • 2.5 nV/√Hz noise at 1kHz • best low-noise/low-capacitance combination in the industry • lowest input capacitance per unit gate length in the industry • lowest noise for a given gate length in the industry • tight Vgs matching at operating bias The LS844 is particularly well suited to low-noise, highgain audio and instrumentation circuits operating from battery voltages up to 60 volts. 48V phantom-powered circuits, like those used in microphone preamplifiers, are especially benefited by the features of the LS844. Low operating Vgs, high gm, tight matching, low noise and low capacitance make it well-suited to numerous audio and instrumentation applications. Sensors, which play such an important role in today’s world, benefit greatly from the performance delivered by the LS844. Such sensor technologies include piezo, quartz, condenser, electret, and MEMs devices. These devices benefit from the LS844’s combination of low input capacitance and low noise. Electrometer applications also benefit from these characteristics. Read More

Linear Systems designs and manufactures the highest-performance line of monolithic dual JFETs in the industry. Contact us for a quote! Back LSK389 Series LOW NOISE, MONOLITHIC DUAL, N-CHANNEL JFET The LSK389A, B, C and D grades of high performance monolithic dual JFETs feature extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. This series has a wide selection of offset and drift specifications. This high-performance, ultra-low-noise dual N-Channel JFET amplifier is the only 100-percent noise tested JFET available and provides the optimal balance between very low noise (en =1.3nV/√Hz) and input capacitance (Ciss = 25pF). Available in TO-71 6L, SOIC 8L, as well as die form. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, Mosfet, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard data sheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: LSK389A TO-71 6L RoHS LSK389B TO-71 6L RoHS LSK389C TO-71 6L RoHS LSK389D TO-71 6L RoHS LSK389A SOIC 8L RoHS LSK389B SOIC 8L RoHS LSK389C SOIC 8L RoHS LSK389D SOIC 8L RoHS LSK389A Die LSK389B Die LSK389C Die LSK389D Die Datasheet Spice Model Application Notes

SINGLE, LOW LEAKAGE PICO-AMP DIODES < Back J/SST/PAD Series SINGLE, LOW LEAKAGE PICO-AMP DIODES The PAD Series Ultra-Low Leakage, Protection Diode is a direct replacement for the Siliconix-Vishay part series. It is ideal for Pico Amp, Ultra-Low Leakage, Protection Diode Applications. This part series is available in the TO-72 3L RoHS, TO-92 2L RoHS and SOT-23 3L RoHS package, as well as die form. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: PAD1 TO-72 3L RoHS PAD2 TO-72 3L RoHS PAD5 TO-72 3L RoHS PAD10 TO-72 3L RoHS PAD20 TO-72 3L RoHS PAD50 TO-72 3L RoHS PAD100 TO-72 3L RoHS JPAD1 TO-92 2L RoHS JPAD2 TO-92 2L RoHS JPAD5 TO-92 2L RoHS JPAD10 TO-92 2L RoHS JPAD20 TO-92 2L RoHS JPAD50 TO-92 2L RoHS JPAD100 TO-92 2L RoHS PAD1 SOT-23 3L RoHS PAD2 SOT-23 3L RoHS PAD5 SOT-23 3L RoHS PAD10 SOT-23 3L RoHS PAD20 SOT-23 3L RoHS PAD50 SOT-23 3L RoHS PAD100 SOT-23 3L RoHS PAD1 Die PAD2 Die PAD5 Die PAD10 Die PAD20 Die PAD50 Die PAD100 Die Datasheet Spice Model Application Notes

< Back FAST SAMPLE AND HOLD Linear Systems Jun 10, 2024 In this interesting design, a strobe pulse sets the sample mode. Here's how it works: When the strobe pulse s —Strobe pulse will turn on JFET Q1 which allows the signal to be sampled to charge capacitor C1. When the strobe pulse returns to 0 V, JFET Q1 is turned off and capacitor C1 holds the voltage value of the sampled signal plus the offset voltage of MOSFET Q 2. The JFET used could be anyone of Linear Integrated Systems switch JFETs. Ideally the lower the drain -to-source voltage the better to reduce the offset voltage of the JFET. The output signal decays at a rate of 1 mV/s. From logic input of 531 op-amp IC2 turns on JFET Q1 to complete feedback loop to IC1, Q1, and Q2. Capacitor C1 charges to voltage equal to that of input signal plus gate-to-source offset voltage of Q2. At end of strobe time, feedback loop is broken and C1 holds voltage until time of next strobe pulse. Decay in output voltage between samplings is 1 mV/s.—"Signetics Analog Data Manual," Signetics, Sunnyvale, CA, 1977, p 643-644.

2N5114 SERIES LOW ON-RESISTANCE, P-CHANNEL JFET SWITCH < Back 2N5114 Series 2N5114 SERIES LOW ON-RESISTANCE, P-CHANNEL JFET SWITCH The 2N5114 Series Low On-Resistance, P-Channel JFET Switch is a direct replacement for Siliconix-Vishay equivalent part. It is ideal for low resistance, low capacitance switching applications. Available in TO-18 3L RoHS package, as well as in die form. Advanced screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information: Below are the options you have when ordering this part series: 2N5114 TO-18 3L RoHS 2N5115 TO-18 3L RoHS 2N5116 TO-18 3L RoHS 2N5114 Die 2N5115 Die 2N5116 Die Datasheet Spice Model Application Notes

< Back Millions of Devices in Stock! Linear Systems Mar 17, 2023 LS844 Monolithic Dual Small-Signal JFET, 3N163 Small-Signal MOSFET, LS320 BiFET and Many More! NEWS RELEASE FOR INFORMATION CONTACT: Linear Systems, Inc. Sales Department Phone: (510) 490-9160 Email: sales@linearsystems.com Linear Systems Announces Large-Scale Availability of Ultra Low Noise JFETs and Small-Signal Semiconductors FREMONT, Calif. – August 26, 2021 – Linear Systems, a world-class producer of ultra-low-noise JFETs and other small-signal discrete semiconductors, announces the large-scale availability of five of its top-performing components. These components, ranging from low-noise monolithic dual JFETs to small-signal MOSFETs, are available in wafer form in quantities ranging from one million to ten million for immediate packaging and shipment. All parts meet Linear Systems' industry-leading datasheet specifications and are available for fast delivery due to substantial buffer stock of wafers. Parts available for shipment include : 1. LS844 Monolithic Dual Small-Signal JFET: One million dice in wafer form in stock. This low-noise front-end amplifier features high Common Mode Rejection Ratio and excellent matching over a wide range of temperatures. [Download Data Sheet] 2. 3N163 Small-Signal MOSFET : Three million dice in wafer form in stock. Ideal for sensor applications such as gas detection and piezo devices, with half the noise of competitors' parts. [Download Data Sheet] 3. LS320 BiFET Amplifier: 1.3 million dice in wafer form in stock. A high-input impedance, single monolithic amplifier, designed as a direct replacement for Amperex equivalent parts. Perfect for high impedance sense amplifier applications. [Download Data Sheet] 4. 2N/PN/SST4391 N-Channel JFET Series: 2.5 million dice in wafer form in stock. This single, low-noise N-channel JFET switch is ideal for low-noise, high-gain, low-resistance switching and amplifier applications. [Download Data Sheet] 5. 2N/PN/SST4117A N-Channel JFET Series: 14.3 million dice in wafer form in stock. This single, low-capacitance, ultra-high-input-impedance N-channel JFET amplifier is a direct replacement for Fairchild, NXP, and Siliconix-Vishay parts. [Download Data Sheet] These parts are also available in bare die and sorted wafer form. In addition to these million-plus parts inventories, Linear Systems keeps substantial quantities of all its parts on hand, including the industry-leading LSK389 monolithic dual N-channel ultra-low-noise JFET. About Linear Systems Founded in 1987, Linear Systems is a Silicon Valley-based designer, manufacturer, and seller of precision, high-performance, small-signal discrete semiconductors. Linear Systems produces ultra-low-noise monolithic dual and single JFETs, bipolar transistors, high-speed DMOS switches, small-signal MOSFETs, ultra-low-leakage diodes, and BiFET amplifiers. These parts are designed into world-class products in fields such as Test & Measurement, Audio, Scientific Optical, Military Sensor, Hydrophone/Sonobuoys, Industrial Controls, and Hybrids. For these and other parts, download Linear Systems' [Product Selection Guide] and [Databook]. For more information, visit www.linearsystems.com .

< Back 3N163 App Note Introduction Wireless real-time radiation sensors networks offer the general public and those that work in high radiation areas greater protection against radiation hazards. Combined with real-time localized and global heat mapping of radiation levels, these radiation networks will help give government and environmental agencies the ability to understand the radiation landscape and respond quickly to radiation changes before they become life-threatening. Low-cost, low-power and no-power radiation sensors, also known as RADFETs (radiation field effect transistors) or dosimeters, are necessary for the implementation of these networks. The RADFET is unique because it does not need a power source to detect radiation. It is also unique in that it records the amount of actual radiation exposure and, as a non-volatile analog memory device, stores the level of radiation exposure as a change in threshold voltage. RADFETs are relatively simple circuits, consisting of only a PMOS transistor. The LS 3N163 PMOS (P-Channel) MOSFET transistor can be used to design RADFETs to meet different design requirements like cost, sensitivity, linearity, and power. The ability to optimize a RADFET for these different design requirements give network designers the ability to construct wireless radiation sensor networks that can also be optimized for cost and performance on a wide scale. Radiation detector principles PMOS MOSFET radiation detectors work on the principle that electron-hole pairs form when radiation or an ionizing particle strikes the MOSFET. This in turn results in shifts to the threshold voltage and drain current parameters of the MOSFET device. Because the change in threshold voltage with radiation exposure is highly linear in a PMOS device, PMOS devices such as the LS 3N163 are commonly used as a radiation detector. In a typical application, the LS 3N163 is operated in unbiased mode (no-power mode) and exposed to radiation. The change in threshold voltage is then measured and the corresponding radiation exposure level determined. In another application, where higher levels of sensitivity are needed, the LS 3N163 is operated in biased mode (power mode). Read More

Linear Systems designs and manufactures the highest-performance line of monolithic dual JFETs in the industry. Contact us for a quote! Back SST/U440 Series WIDEBAND HIGH GAIN MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER The SST/U440 Series Wideband, High-Gain, Monolithic Dual N-Channel JFET Amplifier is targeted for use in a wide range of precision instrumentation and sensor applications. The series is available inThe SST/U440 Series Wideband, High-Gain, Monolithic Dual N-Channel JFET Amplifier is targeted for use in a wide range of precision instrumentation and sensor applications. The series is available in the TO-71 6L and SOIC 8L RoHS package, as well as in die form. Advance d screening options are available for our diverse product lineup, featuring JFETS, Bipolar transistors, MOSFETs, current regulators, and Diodes. Our special screening covers all the parameters listed in the standard datasheet, including comprehensive package pin-out. Connect with our experienced technical team to discuss your specific needs and tailor your requirements—email us at support@linearsystems.com or call (510) 490-9160. MOQ applies to these specialized services. Ordering Information Below are the options you have when ordering this part series: U440 TO-71 6L RoHS U441 TO-71 6L RoHS SST440 SOIC 8L RoHS SST441 SOIC 8L RoHS Datasheet Spice Model Application Notes